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首先给出在InP衬底上利用MOCVD法生长InP、InGaAs的生长条件，而后分别给出了InP／InP的生长特性，InGaAs／InP的组份控制和生长特性及生长温度对InGaAs特性的影响。
Firstly, the growth conditions of InP and InGaAs grown on InP substrate by MOCVD are given. Then, the growth characteristics of InP / InP, the compositional control and growth characteristics of InGaAs / InP and the growth temperature on InGaAs properties are given respectively.