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用射频溅射法制备了金属／半导体Fex（In2O_3）(1-x)颗粒膜．用XRD，TEM辅以磁性测量研究了该系列颗粒膜的微结构实验结果表明，纳米尺度的Fe颗粒均匀地分散在非晶态In2O3中．退火可使In2O3晶化，其晶格常数与Fe的体积分数有关；退火可使Fe颗粒长大，由超顺磁性变为铁磁性．
A metal / semiconductor Fex (In2O_3) (1-x) granular film was prepared by RF sputtering. The microstructures of the series of particles were investigated by XRD, TEM and magnetic measurements. The experimental results show that nano-scale Fe particles are uniformly dispersed in amorphous In2O3. Annealing allows In2O3 crystallization, the lattice constant and the volume fraction of Fe; annealing can make Fe particles grow from superparamagnetic to ferromagnetic.