研究了电沉积制得的ＡｕＩｎＳｅ２半导体薄膜上过氧化氢阴极还原过程中产生的电化学振荡行为，对影响该振荡行为的一些因素如半导体薄膜的后处理、溶液组成、传质、光照、化学浸渍作用等进行了分析，同时采用外界周期性光照和外接小幅度正弦波电位来调节振荡频率，为金铟硒半导体薄膜发展成为光电传感器件提供了一定的理论与实践基础． The electrochemical oscillatory behavior of the electrodeposited AuInSe2 semiconductor film during cathodic reduction of hydrogen peroxide was studied. Some factors influencing the oscillatory behavior were investigated, such as post-processing of semiconductor thin films, solution composition, mass transfer, illumination, chemical immersion The effects of external periodic illumination and external small amplitude sinusoidal wave are used to adjust the oscillation frequency, which provides a theoretical and practical basis for the development of gold indium selenide semiconductor thin film into a photoelectric sensor.