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针对现有掩模设计方法的不足,提出了同时考虑晶圆切割和随机缺陷的掩模设计方法.在预估边到边晶圆切割引起的成品率丢失的同时,将随机缺陷引起的成品率丢失也纳入了设计参考量.对掩模上芯片进行布局规划的阶段,使那些由于随机缺陷造成成品率丢失较高的芯片在布局规划的目标函数中拥有较大的权重.这些芯片会在模拟退火算法迭代的过程中被自动放置在相应的与其他芯片较少切割冲突的位置,避免了后期晶圆切割对其产量造成的损失.此方法均衡了芯片之间的产量,在满足各个芯片需要产量的前提下,减少了生产所需的晶圆数量.与最小化掩模面积的设计方法和只考虑晶圆切割的设计方法比较,该方法使生产所需要的晶圆数量分别减少了15.22%和7.14%.
Aiming at the deficiency of the existing mask design methods, a mask design method considering both wafer cutting and random defects is proposed.While yield loss caused by edge-to-edge wafer cutting is estimated, the yield rate caused by random defects Lost also incorporates the design reference. The stage of layout planning on the chip on the mask allows those chips that have a high yield loss due to random defects to have a greater weight in the objective function of layout planning, The iterative process of annealing algorithm is automatically placed in the corresponding position with less cutting conflicts with other chips to avoid the loss caused by the late wafer cutting to its output.This method balances the output between the chips and meets the needs of each chip Yield, reducing the number of wafers required for production.Compared with the design method that minimizes the mask area and the design method that only consider the wafer cutting, the method reduces the number of wafers required for production by 15.22% And 7.14%.