用于低噪声放大器和高效率功率放大器以及振荡器的微波器件的研制工作正继续迅速的发展。本文评述了几种类型的微波器件在器件设计及性能方面的新进展。其中包括低噪声场效应晶体管、功率场效应晶体管、磷化锢电子转移振荡器和砷化镓崩越二极管。小功率放大器件在8千兆赫下的噪声系数小于2分贝,功率器件在8～18千兆赫频段内有大于20%的转换效率。比较了微波器件在15千兆赫下的连续波功率极限。 The development of microwave devices for low-noise amplifiers and high-efficiency power amplifiers and oscillators continues to grow rapidly. This article reviews the recent advances in device design and performance for several types of microwave devices. These include low-noise field-effect transistors, power field-effect transistors, phosphide-bonded electron-transfer oscillators and gallium arsenide collapse diodes. The low-power amplifier has a noise figure of less than 2 dB at 8 GHz and a power conversion efficiency of more than 20% in the 8-18 GHz band. The CW power limits of microwave devices at 15 GHz are compared.