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利用射频磁控溅射方法在Ｓｉ（１００）衬底上生长ＺｒＯ２薄膜作为缓冲层，以阻止Ｓｉ与ＹＢＣＯ的反应，然后用直流磁控溅射方法，在其上做出了Ｔｃ为８５Ｋ的ＹＢＣＯ超导薄膜。该文对这种ＹＢＣＰ／ＺｒＯ２／Ｓｉ结构的工艺条件进行了研究分析。
Using RF magnetron sputtering method to grow ZrO2 thin film on Si (100) substrate as a buffer layer to prevent the reaction of Si and YBCO, and then using a DC magnetron sputtering method, a YBCO having a Tc of 85K Superconducting film. In this paper, the YBCP / ZrO2 / Si structure of the process conditions were studied.