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用低压ＭＯＣＶＤ多源法在单晶ＹＳＺ和具有双轴取向ＩＢＡＤＹＳＺ的金属基带上沉积了ＹＢＣＯ膜，它们的Ｊｃ（７７．３Ｋ，０Ｔ）分别为～２×１０６Ａ／ｃｍ２和～７×１０４Ａ／ｃｍ２．分析了本试验中的Ｊｃ差别原因．在单晶ＹＳＺ上ＹＢＣＯ高Ｊｃ数值显示了用ＭＯＣＶＤ制备涂层膜导体的潜力
Low-pressure MOCVD multi-source method was used to deposit YB-CO films on single-crystal YSZ and biaxially oriented IBAD -YSZ metal substrates with Jc (77.3K, 0T) of ~2 × 106 A / cm2 and ~7 × 104A / cm2. Analysis of the differences in the reasons for Jc in this experiment. The YCCO high Jc value on a single crystal YSZ shows the potential for preparing a coated film conductor by MOCVD