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在高密度的集成电路中,应用多晶硅来作栅极、互连线和负载电阻时,它的晶体结构和表面平整度是重要的特性。本研究是根据扩散掺杂和离子注入前后硅层的结构,形貌以及电性能来评价无定形硅层和多晶硅层。通常,用低压CVD (LPCVD)制作的多晶态膜具有圆柱状生长结构,并伴之以粗糙的表面。用磷作扩散掺杂将促进晶粒的生长,增加表面的粗糙程度。相反,在用磷作扩散掺杂并经退火后,无定形膜却仍然保留着它原来表面的平整。无定形膜虽然保留了其原来的平滑度,但是从膜的顶部到底部它的晶粒结构却表现出不均匀。它的不均匀和注入深度有关。
In high-density integrated circuits, the crystal structure and surface flatness of polysilicon are important features when using polysilicon as gate, interconnect and load resistor. In this study, amorphous silicon and polysilicon layers were evaluated based on the structure, morphology and electrical properties of the silicon layers before and after diffusion doping and ion implantation. In general, polycrystalline films made by low pressure CVD (LPCVD) have a cylindrical growth structure with a roughened surface. Addition of phosphorus for diffusion doping will promote the growth of grains, increasing the surface roughness. In contrast, after diffusion doping with phosphorus and annealing, the amorphous film still retains its original surface smoothness. Although the amorphous film retains its original smoothness, its grain structure shows unevenness from the top to the bottom of the film. Its unevenness and depth of injection.