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本文报道了掺氧液相外延GaAs材料的拉曼光谱测量结果.观测到体内晶格振动的LO与等离子激元的耦合模L_+和L_-以及表面耗尽层的LO,2TO和2LO.在2.7 ×10~(12)cm~(-3)-5.6 × 10~(12)cm~(-3)的电子浓度范围内,实验结果与理论计算结果是一致的.
In this paper, Raman spectroscopy measurements of oxygen-doped liquid-phase epitaxial GaAs materials are reported. The LO and 2O LO and plasmon coupling modes L_ + and L_- and the LO, 2TO and 2LO of the surface depletion layer are observed in vivo. 2.7 × 10 ~ (12) cm ~ (-3) -5.6 × 10 ~ (12) cm ~ (-3). The experimental results are consistent with the theoretical results.