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从形成有序小面的晶体表面观察到的LEED图样变化可以确定该表面的结构.本文介绍了这一基本方法,以及它在Ⅲ-Ⅴ族化合物半导体表面上的应用.对于最近在GaAs(111)和InP(111)面上观察到的现象的分析表明,这些面上主要存在的可能是(110)晶向的小面.根据小面结构的特征,我们对 GaAs(111)(3 ×3)再构提出了一种可能的原子排列模型.
The basic structure of this surface can be determined by the change of LEED pattern observed from the surface of the as-grown facet.This paper introduces the basic method and its application on the group III-V compound semiconductor surface. ) And InP (111) shows that most of these planes are probably (110) oriented facets.According to the characteristics of facet structure, we investigate the effect of GaAs (111) (3 × 3 ) Reconstruction proposed a possible atomic arrangement model.