采用固相外延的方法在Ｓｉ（１００）衬底上生长了Ｃ组分为０．５ａｔ．％的Ｓｉ１－ｙＣｙ合金，并对合金的质量及特性进行了测试分析．采用多重离子注入的方法，并利用ＳｉＯ２做缓冲层，能够获得满意的Ｃ离子分布．小束流、长时间的注入方法能避免β－ＳｉＣ相的出现，最大限度地抑制动态退火效应．对Ｓｉ衬底进行非晶化预处理能显著提高代位Ｃ原子的比例．两步退火过程能有效地减少注入前沿的点缺陷，实现较好的外延生长 The solid phase epitaxy method is used to grow a C component of 0.5 at. On a Si (100) substrate. % Si1-yCy alloy, and the quality and characteristics of the alloy were tested and analyzed. Using multiple ion implantation methods, and the use of SiO2 as a buffer layer, can be satisfied with the C ion distribution. The small beam current and long time injection method can avoid the appearance of β-SiC phase and minimize the dynamic annealing effect. Amorphous pretreatment of Si substrate can significantly increase the proportion of substitutional C atoms. The two-step annealing process can effectively reduce the point defects in the forefront of implantation and achieve better epitaxial growth