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报道了GaAs／InGaAs异质结双杨功率场效应晶体管的设计考虑、器件结构和制作，讨论了所采用的一些关键工艺，给出了器件性能。在12GHz下，最大输出功率≥130mW，增益≥12dB，功率附加效率≥30％。
The design considerations, device structures and fabrication of GaAs / InGaAs heterostructure double Yang power field-effect transistors are reported. Some key techniques are discussed and the device performances are given. At 12GHz, the maximum output power ≥ 130mW, gain ≥ 12dB, additional power efficiency ≥ 30%.