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This paper presents a 3.4-3.6 GHz power amplifier(PA) designed and implemented in InGaP/GaAs HBT technology.By optimizing the off-chip output matching network and designing an extra input-matching circuit on the PCB,several problems are resolved,such as resonant frequency point migration,worse matching and lower gain caused by parasitics inside and outside of the chip.Under V_(cc) = 4.3 V and V_(bias) = 3.3 V,a P_(1dB) of 27.1 dBm has been measured at 3.4 GHz with a PAE of 25.8%,the 2nd and 3rd harmonics are -64 dBc and -51 dBc,respectively. In addition,this PA shows a linear gain more than 28 dB with S_(11)<-12.4dB and S_(22)<-7.4 dB in 3.4-3.6 GHz band.
This paper presents a 3.4-3.6 GHz power amplifier (PA) designed and implemented in InGaP / GaAs HBT technology. By optimizing the off-chip output matching network and designing an extra input-matching circuit on the PCB, several problems are resolved, such as resonant frequency point migration, worse matching and lower gain caused by parasitics inside and outside of the chip. Under V_ (cc) = 4.3 V and V_ (bias) = 3.3 V, a P_ (1dB) of 27.1 dBm has been measured at 3.4 GHz with a PAE of 25.8%, the 2nd and 3rd harmonics are -64 dBc and -51 dBc, respectively. In addition, this PA shows a linear gain more than 28 dB with S_ (11) <- 12.4 dB and S_ 22) <- 7.4 dB in 3.4-3.6 GHz band.