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硒砷碲膜的构造及其特点长期以来,人们对于各种光电导膜进行了广泛的研究,但很难取得令人满意的效果。而硒砷碲光电导膜则是比较成功的一种。硒砷碲光电导膜是由硒(se)、砷(As)、碲(Te)三种元素的非晶半导体所组成。取这三种元素符号的英文字头,就命名为SATICON。根据NHK后藤直宏在1983年5月发表的文章,硒砷碲靶面目前的基本构造如图1(a)所示。硒砷碲靶采用了以Se为主体的非结晶光电导材料,由于它一般表现为P型,故常常能和
Structure and characteristics of selenium, arsenic tellurium film For a long time, people conducted extensive research on various photoconductive films, but it is difficult to obtain satisfactory results. The selenium arsenic telluride photoconductive film is a more successful one. Selenium arsenic telluride photoconductive film is composed of selenium (se), arsenic (As), tellurium (Te) three elements of amorphous semiconductor. Take the English prefix of these three elements of symbols, named SATICON. According to an article published by NHK Goto Hiroshi in May 1983, the basic structure of the target surface of selenium, arsenic and tellurium is shown in Fig.1 (a). Selenium arsenic tellurium target using Se as the main body of non-crystalline photoconductive material, because it is generally expressed as P-type, it can often and