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耿效应和崩越二极管固体微波信号源的普遍使用,引人注目地证明这些器件的可靠性已有提高。目前耿效应和崩越器件在许多要求很高的场合,尤其是在不能允许失效的军事系统中应用。因此,为了确保可靠性,确定必要的工艺步骤以及制造技术必要的改进就变得十分重要。因为这些器件使用砷化稼而不是大家较为熟悉的硅,所以需要一些新的准则,以确保器件可靠工作。以前对器件工作参数(如最高有源区温度)提出的一些限制不再适用。耿效应和崩越二极管通常用于直流一微波能量的直接转换,或者用于低电平的微波信号放大。耿效应二极管在7肠的转换效率下有使用价值的功率输出范围为5到500毫瓦,而崩越二极管在13%的效率下输出达1.5瓦。耿二极管在构造上采用。干一。一。+夹层结
The widespread use of diode solid-state microwave sources and Geng effect and collapsing diodes have dramatically increased the reliability of these devices. At present, Geng effect and collapse devices in many demanding applications, especially in military systems that can not be allowed to fail. Therefore, in order to ensure reliability, it becomes important to identify the necessary process steps as well as the necessary improvements in manufacturing technology. Because these devices use arsenic instead of the more familiar silicon, new guidelines are needed to ensure reliable operation of the device. Previous restrictions on the operating parameters of the device (such as the highest active region temperature) no longer apply. Geng effect and collapse diode is usually used for direct DC-microwave energy conversion, or for low-level microwave signal amplification. Geng effect diodes have a useful output power range of 5 to 500 milliwatts at a conversion efficiency of 7 gut, while a collapsing diode outputs 1.5 W at 13% efficiency. Geng diode used in the construction. Do one. one. + Mezzanine knot