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对两种不同条件下制备的多孔硅进行了红外透射光谱（ＦＩＴ）测量，并对超临界干燥和自然干燥条件下的光致发光（ＰＬ）光谱进行了对比测量。用高分辨率透射电镜对其结构进行了观察，研究表明多孔硅的发光机理与其制备条件有关。
The porous silicon prepared under two different conditions was measured by infrared transmission spectroscopy (FIT), and the photoluminescence (PL) spectra under supercritical drying and natural drying were compared. High-resolution transmission electron microscopy of the structure was observed, the study shows that the mechanism of light-emitting silicon and its preparation conditions.