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在发光中的色散非线性和非线性效应用Si/SiO_2非晶形量子结构进行了研究。由反射光谱得到的折射率变化非线性地取决于激发强度,并且对于低强度用饱和非线性来描述。非线性折射率出现由超晶电子结构决定的共振状态。发光强度与激发强度的依赖关系表明在不同的激发强度下各种重新组合的主导作用,反映在折射率变化的关系曲线上。在亚带被激发的电荷载体的寿命(=1ns)和双稳性的参数根据饱和非线性和数据估算。
Dispersive nonlinear and nonlinear effects in luminescence have been investigated using Si / SiO 2 amorphous quantum structures. The change in refractive index resulting from the reflectance spectrum depends non-linearly on the excitation intensity and is described for saturation at low intensity. Nonlinear refractive index appears by the superfine electronic structure of the resonance state. The dependence of the luminescence intensity on the excitation intensity shows that the dominant effect of the various recombination at different excitation intensities is reflected in the dependence of the index of refraction. Lifetimes (= 1 ns) and bistability of charged carriers excited in the sub-band are estimated based on the saturation nonlinearity and the data.