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采用射频反应磁控溅射法在p-Si(100)衬底上成功制备出SrHfON高k栅介质薄膜,并研究了Au/SrHfON/Si MOS电容的漏电流机制及应力感应漏电流(SILC)效应。结果表明,MOS电容的漏电流密度随N2流量的增加而减小。在正栅压下,漏电流主要由Schottky发射机制引起;在负栅压下,漏电流机制在低、中、高栅电场区时分别为Schottky发射、F-P发射和F-N隧穿机制。同时,Au/SrHfON/SiMOS电容表现出明显的SILC效应,经恒压应力后薄膜在正栅压下的漏电流由Schottky发射和F-P发射机制共同作用,且后者占主导地位。
SrHfON high-k gate dielectric thin films were successfully prepared on p-Si (100) substrates by radio frequency reactive magnetron sputtering. The leakage current mechanism and stress induced leakage current (SILC) of Au / SrHfON / Si MOS capacitors were investigated. effect. The results show that the leakage current density of MOS capacitor decreases with the increase of N2 flow rate. Under positive gate voltage, the leakage current is mainly caused by the Schottky emission mechanism. Under negative gate voltage, the leakage current mechanism is Schottky emission, F-P emission and F-N tunneling mechanism in the low, middle and high gate electric field respectively. At the same time, the Au / SrHfON / SiMOS capacitor shows obvious SILC effect. The leakage current of the film under the positive gate voltage is affected by Schottky emission and F-P emission mechanism under constant compressive stress, and the latter is dominant.