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研究了Si+ 和Si+ /As+ 注入到HorizontalBridgman (HB)和LiquidEncapsulatedCzochralski(LEC)方法制备的半绝缘GaAs衬底电激活效率与均匀性。结果发现 :在相同条件下 (注入与退火 ) ,不同生长方法的半绝缘GaAs衬底电激活不同 ,通常电激活HB >LEC ,HBSI—GaAs(Cr)(1 0 0 )A面 >(1 0 0 )B面 ,Si+ /As+ 双离子注入电激活高于Si+ 注入。Si+ /As+ 注入的LECSI—GaAs(EL2 )可改善衬底中EL2横向不均匀分布对电激活均匀性的影响 ,可改善注入层内横向电激活均匀分布。剥离Hall测量表明 ,有源层电子迁移率分布均匀 ,近表面位量 ,可达 40 0 0cm2 /V .s。Raman谱显示 :Si+ /As+ 双注入可消除或减少与As空位 (VAs)有关的呈现正电性的复合体 ,这是提高注入层内在质量的重要原因。
The electrical activation efficiency and uniformity of semi-insulating GaAs substrates prepared by the injection of Si + and Si + / As + into HorizontalBridgman (HB) and LiquidEncapsulated Cochochralski (LEC) The results show that the semi-insulating GaAs substrates with different growth methods have different electric activation under the same conditions (implantation and annealing), and usually activate HB> LEC and HBSI-GaAs (Cr) (100) A> 0) B surface, Si + / As + double ion implantation is more electrically activated than Si + implantation. The LECSI-GaAs (EL2) implanted by Si + / As + can improve the uniformity of electro-active uniformity due to the lateral non-uniform distribution of EL2 in the substrate and improve the uniform lateral electrical activation distribution in the implanted layer. The peeled-off Hall measurements show that the electron mobility of the active layer is distributed uniformly and the near surface potential is up to 40 0 cm 2 / V .s. Raman spectra show that Si + / As + double implants can eliminate or reduce the positively charged complexes associated with As vacancies (VAs), which is an important reason for improving the intrinsic quality of the implanted layer.