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双栅（ＤｕａｌＧａｔｅ）ＭＯＳ场效应管所具有的完全对称的独特结构带来一系列电学特性变化引起了人们广泛的研究兴趣。本文利用格林函数法，采用合理的边界条件，得出ＤＧＭＯＳ体硅的二维电势解析表达式，并由此导出适用于亚微米沟道ＤＧＭＯＳ管阈值电压的解析表达式。阈值电压模型与有关实验数据符合甚好。对于进一步深入探讨ＤＧＭＯＳ管的体反型（ＶｏｌｕｍｅＩｎｖｅｒｓｉｏｎ）效应及其引起的电学特性变化，本模型提供了有效的途径。
The unique symmetry of dual-gate MOSFETs brings about a series of changes in electrical properties that have attracted a great deal of research interest. In this paper, the Green’s function method is adopted to obtain the analytical expression of the two-dimensional potential of DGMOS bulk silicon with reasonable boundary conditions. The analytical expression of the threshold voltage suitable for the DGMOS transistor in sub-micron channel is obtained. The threshold voltage model is in good agreement with the experimental data. This model provides an effective way to further investigate the Volume Inversion effect of DGMOS tubes and the changes of their electrical properties.