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本文报告用双极场引晶体管(BiFET)电化电流解析理论计算的内禀结构直流特性,晶体管有两块等同MOS栅,纳米厚度纯硅基,没有产生复合和俘获.用交叉双路或Z形单路递归循环算法,很快得到三个势变量的数字解:静电势,电子和空穴电化学势,从而算出电子和空穴表面和体积沟道电流.三种势边界条件主导地影响内禀结构直流特性,用20个量级跨度电流说明.(10-22~10-2A/□,迁移率400cm2/(V.s) ,1.5nm厚栅氧化层,30nm厚纯基)强表面沟道内载流子空间电荷限制飘移电流起主导作用,除此以外理论上还观察到,体积沟道物理夹断导致经典飘移电流饱和,因德拜长度(25μm)远大于器件尺寸(25nm) ,纯基内少量电子和空穴载流子屏蔽消失导致纯基内体积沟道完全切断.这种切断是从在1952Shockley结栅场引晶体管理论中描述的非纯基体积沟道物理夹断推理而来.
In this paper, the intrinsic structure DC characteristics calculated by the BiFET electrochemical current theory are reported. The transistor has two equivalent MOS gate and nano-thickness pure silicon without recombination and trapping. Single recursive looping algorithm quickly obtains the digital solutions of three potential variables: the electrostatic potential, the electron and hole electrochemical potentials to calculate the electron and hole surfaces and the volume channel current.The three potential boundary conditions dominate the influence of Intrinsic structural DC characteristics, with a current of 20 magnitude span description (10-22 ~ 10-2A / □, mobility 400cm2 / (Vs), 1.5nm thick gate oxide, 30nm thick pure base) In addition, theoretically it is also observed that the volume channel physical pinch-off results in the saturation of the classical drift current. The length of Debye (25μm) is much larger than the size of the device (25nm) The disappearance of a small amount of electron and hole carrier shielding leads to a complete cut-off of the pure-base-volume channel, which is derived from the non-pure-base bulk-channel physical pinch reasoning described in the 1952 Schockley Junction Transistor Theory.