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采用金属有机化学气相沉积(MOCVD)制备了GaAs基AlGaInP发光二极管(LED),其中在p-GaP上制作Au/AuBe/Au接触电极,经不同温度快速热退火后,使用扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)和俄歇电子能谱仪(AES)对样品的欧姆接触的界面特性进行了分析和表征。使用光电测试仪对样品的电性能进行了测试。结果表明,随着退火温度的升高,各元素的扩散深度和强度增加,Au表面出现灰色片状聚合物,其主要成分为AuGa和BeO;在490~550℃时,金属层与GaP界面表层Au中含有Ga和Be元素,Ga P中含有Au和Be元素;Ga元素扩散至Au层中,Au3Be相分解并形成β-AuGa,金属层物相结构转变成Au与β-AuGa两相的混合。在490~550℃时LED的正向电压保持不变。
GaAs-based AlGaInP LEDs were fabricated by MOCVD. Au / AuBe / Au contact electrodes were fabricated on p-GaP. After scanning electron microscopy (SEM) at different temperatures, , X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyze and characterize the ohmic contact properties of the samples. The electrical properties of the samples were tested using a photoelectric tester. The results show that as the annealing temperature increases, the diffusion depth and strength of each element increase, gray flaky polymer appears on Au surface, and the main components are AuGa and BeO. When the temperature is between 490 and 550 ℃, Au contains Ga and Be elements, Ga P contains Au and Be elements; Ga element diffuses into the Au layer, Au3Be phase decomposes to form β-AuGa, and the phase structure of the metal layer is transformed into a mixture of Au and β-AuGa two phases . At 490 ~ 550 ℃ LED forward voltage remains unchanged.