当前,电子信息系统为了实现体积更小、速度更快和功耗更低,正快速向微小型化以及单片集成方向发展,其中的各种有源器件(主要为半导体材料支撑)和无源器件(主要为功能材料支撑)的集成尤为重要和迫切.因此,将具有电、磁、声、光、热等功能特性的介质材料(以极化为特征)与具有电子输运特性的半导体材料,通过固态薄膜的形式生长在一起,形成介电/半导体复合人工新材料,这种复合薄膜将具有多功能一体化和介电-半导体异质层间电磁性能的调制耦合两大特点,这些特征既为实现信息的探测、处理、传输、执行和存储等5种主要功能单元的单片集成提供了可能,又将长期以来人们追求单一材料的物理极限的研究转移到追求异质结构的复合效应中来,这为研制更高性能的电子器件提出了新的思路.结合当前国内外在介电和半导体复合薄膜生长的研究进展情况,介绍和讨论了我们近期在氧化物介电材料与半导体GaN复合薄膜生长与界面控制方面的一些研究结果. At present, electronic information systems are rapidly becoming more and more miniaturized and monolithic in order to achieve smaller, faster and lower power consumption. Among them, various active devices (mainly supporting semiconductor materials) and passive The integration of devices (mainly functional material support) is particularly important and urgent.Therefore, the dielectric material (with polarization) that has the functional characteristics of electricity, magnetism, sound, light and heat and the semiconductor material with electron transport properties , Grow together in the form of a solid film to form a dielectric / semiconductor composite artificial new material that will have two major characteristics of multi-functional integration and modulation coupling of the electromagnetic properties between the hetero-layers of the dielectric-semiconductor. These characteristics It not only provides the possibility of monolithic integration of the five main functional units such as detection, processing, transmission, execution and storage of information, but also shifts the research on the physical limit of the pursuit of a single material to the compound effect of pursuing heterogeneous structures Which come up with new ideas for the development of higher performance electronic devices.Combining with the current research progress in the growth of dielectric and semiconductor composite films at home and abroad, We present and discuss some of our recent findings on the growth and interface control of oxide dielectric materials and semiconductor GaN composite thin films.