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对ＩｎＡｓ沟道ＩｎＡｌＡｓ－ＩｎＡｓ高电子迁移率晶体管材料及器件的设计和器件制作工艺进行了研究，器件样品性能良好，１μｍ栅长ＩｎＡｌＡｓ－ＩｎＡｓＨＥＭＴ器件的最大跨导３００Ｋ时达到２５０ｍＳ／ｍｍ。这是国内首次研制成功的ＩｎＡｓ沟道ＨＥＭＴ器件。
The design and fabrication process of InAsAs InAsAs-InAs high-electron-mobility transistor materials and devices have been studied. The device samples have good performance. The maximum transconductance of 1μm gate length InAlAs-InAsHEMT devices reaches 250mS / mm at 300K. This is the first successful development of InAs channel HEMT devices in China.