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We report on a three-colour InAs/InP(100) quantum dot laser under continuous wave mode at an operation temperature of 20 ℃.Three lasing peaks are observed simultaneously,the high-energy peak undergoes continuous buleshift,while the splitting energy gap between the low-energy peaks is somewhat fixed as the injection current increases.The maximum output power from one facet without coating is more than 34 m W with a slope efficiency of 102mW/A just above the threshold current.Three peaks of differential efficiency of output power are observed,just corresponding to each peak in lasing spectra,respectively.At the same time,the far-field distribution shows only a single transverse mode over the full range of injection current.Quantum dot (QD) lasers have generated a huge amount of interest due to their δ-like quantum state density,which displays unique optical and electrical properties that are different in character to those of the corresponding quantum well (QW) laser and bulk material laser.[1] It has been reported that QD lasers exhibit good features,such as a high gain profile,a low threshold current density,high speedmodulation and high thermal stabilities.[2-7] In the past years,most studies have been carried out on the InAs/GaAs QD lasers (1.3 μm) and InAs/InP QD lasers (1.55 μm) and good performances of QD lasers have been obtained.[8-10] Especially,self mode-lock QD lasers with two-colour lasing peaks have been observed from a monolithic chip.[11-13] However,there has not been a careful study of the lasing process of multi lasing peaks from a monolithic chip.