《Electronics Letters》1992年第7期报道了全钝化高性能InAlAs/InGaAs/InP HFET的研制。由于亚微米栅InAlAs/InGaAs/InP HFET具有优良的直流和微波性能,业已受到极大关注。但现有器件仍存在若干问题,例如:I/V特性中的弯折现象、栅极截止电流较高以及漏源击穿电压较低等。本文介绍的全钝化工艺使上述问题得以解决。由于采用了具有表面耗尽 Electronics Letters, No.7, 1992, reports the development of fully passivated high performance InAlAs / InGaAs / InP HFETs. Submicron gate InAlAs / InGaAs / InP HFETs have received a great deal of attention due to their excellent DC and microwave performance. However, some problems still exist in the existing devices, such as the bending phenomenon in the I / V characteristics, the high gate-off current, and the low leakage breakdown voltage. This article describes the whole passivation process so that the problem can be solved. Due to the surface has been depleted