论文部分内容阅读
本文介绍半绝缘GaAs的补偿模型,讨论国内外的近期实验结果,进而指出:采用液封直接合成工艺,欲用石英坩埚生长未掺杂半绝缘GaAs晶体的可行途径是控制B_2O_3中的含水量.
This paper introduces the compensation model of semi-insulating GaAs, and discusses the recent experimental results at home and abroad. Furthermore, it is pointed out that the feasible method for growing un-doped semi-insulating GaAs crystal by quartz crucible is to control the water content in B 2 O 3.