自从多孔硅的光致发光被报道以来,引起人们的极大关注,这方面的研究得到很大的发展。关于其发光机理,文献[2～4]分别作了解释,目前还存在一定分歧,但人们已经普遍认为量子限制效应在起重要作用,同时表面态也有一定作用。另一方面,虽然多孔硅有很强的发光,但其发光稳定性却一直不能得到很好解决,而且多孔硅的制备为湿法工艺,与传统的硅平面工艺相差甚远,这给多孔硅的进一步发展和应用带来很大困难.Veprek等报道了对非晶硅进行高温下氧气氛中后退火处理,使非晶硅薄膜中形成小颗粒晶粒,在室温下看到了光 Since the photoluminescence of porous silicon has been reported, a great deal of attention has been paid to the research of this area. As for the mechanism of their luminescence, the literature [2 ~ 4] has been explained respectively, and there are still some differences at present. However, it is generally accepted that the quantum confinement effect plays an important role and the surface state also has a certain effect. On the other hand, although porous silicon has strong luminescence, its luminescent stability has not been well solved, and the preparation of porous silicon is a wet process, which is far from the traditional silicon planar process, which gives porous silicon The further development and application of great difficulties.Veprek et al reported that the amorphous silicon after annealing under high temperature oxygen atmosphere, the amorphous silicon film to form small particles, seen at room temperature light