在最大衬底电流条件下 (Vg=Vd/ 2 ) ,研究了不同氧化层厚度的表面沟道 n- MOSFETs在热载流子应力下的退化 .结果表明 ,Hu的寿命预测模型的两个关键参数 m与 n氧化层厚度有着密切关系 .此外 ,和有着线性关系 ,尽管不同的氧化层厚度会引起不同的模型参数 ,但是如果对于不同厚度的氧化层 ,采用不同的 m与 n,Hu的模型仍然成立 .在这个结果的基础上 ,Hu的寿命预测模型能用于更薄的氧化层 Under the maximum substrate current (Vg = Vd / 2), the degradation of surface channel n-MOSFETs with different oxide thicknesses under hot carrier stress was investigated. The results show that the two key aspects of the life prediction model of Hu The parameter m is closely related to the thickness of the oxide layer n. In addition, with a linear relationship, although different oxide thicknesses lead to different model parameters, if different thicknesses of oxide are used, different m and n, Hu models Still holds.On the basis of this result, Hu’s life prediction model can be used for thinner oxide layer