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采用ACRT B法生长了四元稀磁半导体化合物Mn0 .1Cd0 .9In2 Te4 晶体。采用扫描电镜、X射线衍射仪、ISIS能谱仪、Leica定量金相分析仪以及傅里叶变换红外光谱仪研究了晶体中相的结构、形貌、成分及晶片的红外透射光谱。发现晶体生长初始端由于溶质再分配而引起成分偏离配料比 ,结果出现三种相 :α相、β相和 β1相 ,其中α相和 β相是在晶体生长过程中形成的 ,随温度降低 ,从α相中又析出β1相。当晶体生长到稳定段 ,完全形成 β相。Mn0 .1Cd0 .9In2 Te4 晶体从生长初始端到接近稳态区 ,β1相由规则排列的片状向不规则排列的近似圆片状发展。禁带宽度为 1.2eV的Mn0 .1Cd0 .9In2 Te4 在 10 0 0 0～ 4 0 0 0cm- 1的近红外波数范围内 ,其透过率最高达 83% ,在 4 0 0 0～5 0 0cm- 1的中红外波数范围内透过率为 5 9%～ 6 5 %。
ACRT B method was used to grow four-element dilute magnetic semiconductor compound Mn0 .1Cd0.9In2 Te4. The structure, morphology, composition and the infrared transmission spectrum of the crystal were investigated by scanning electron microscopy, X-ray diffraction, ISIS, Leica quantitative metallography and Fourier transform infrared spectroscopy. The results show that there are three phases: α phase, β phase and β1 phase, of which α phase and β phase are formed during the crystal growth. With the decrease of temperature, The β1 phase is precipitated from the α phase. When crystals grow to a stable phase, the beta phase is completely formed. Mn0 .1Cd0 .9In2Te4 crystals from the initial growth to nearly steady-state zone, β1 phase from the regular arrangement of the sheet to the irregular arrangement of the approximate disc-like development. The band gap of 1.2eV Mn0 .1Cd0. 9In2 Te4 in the near-infrared wave number range of 10 0 0 ~ 4 0 0 0 0 cm-1, the transmittance of up to 83% in the 400 ~ 0 0cm - 1 The mid-infrared wave number in the range of transmittance of 59% ~ 65%.