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为实现对硅基材料和MEMS器件内微体缺陷的无损、高效和准确检测 ,在研究广义洛仑兹 米氏散射理论的基础上 ,针对硅基材料和MEMS器件的物理特点 ,对球形缺陷与红外激光相互作用在非垂直方向散射光强分布特点进行了研究和计算机仿真 ,提出利用红外激光背散射分布分析对硅基材料和MEMS器件内部缺陷进行检测的方法 ,并通过实验验证了该方法的有效性。
In order to realize the non-destructive, efficient and accurate detection of micro-defects in silicon-based materials and MEMS devices, based on the generalized Lorentz-Mie scattering theory and the physical characteristics of silicon-based materials and MEMS devices, Infrared laser interaction in the non-perpendicular direction of the light intensity distribution characteristics are studied and computer simulation, the use of infrared laser backscatter distribution analysis of silicon-based materials and MEMS devices to detect defects in the internal and experimental verification of the method Effectiveness.