MnxCd1-xIn2Te4相关论文
采用ACRT B法生长了四元稀磁半导体化合物Mn0 .1Cd0 .9In2 Te4 晶体。采用扫描电镜、X射线衍射仪、ISIS能谱仪、Leica定量金相分析......
MnxCd1-xIn2Te4 (x=0.1) ingot was successfully grown by the modified Bridgman technique, which applied the accelerated cr......
采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mno.1......
研究了ACRT－B法生长的Mn0.2Cd0.9In2Te4晶体中界面形状和各组元沿轴向的分布规律及其分凝因数，发现结晶界面为椭球形；采用理想配比生......
MnxCd1-xIn2Te4 (x=0.1) ingot was successfully grown by the modified Bridgman technique, which applied the accelerated cr......
