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通过对国产加固 N型 MOS电容进行衬底热电子高场注入 ( SHE)及 γ总剂量辐照实验 ,特别是进行总剂量辐射损伤后的热载流子损伤叠加实验 ,从微观氧化物电荷、界面态的感生变化及其界面态的能量分布变化等角度研究比较了 MOS结构热载流子损伤特性及与电离辐射损伤的关系。
By carrying out SHE and γ dose irradiation experiments on domestic reinforced N type MOS capacitors, especially for hot carrier damage superposition experiments after total dose radiation damage, the effects of micro-oxide charge, The change of the interface state and the change of the energy distribution of the interface state, the relationship between the hot carrier damage characteristics of MOS structure and ionizing radiation damage was studied.