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工 作 报 告 期(页)相容器件技术与优值型集成电路……………………………………………………一(1)旋涡状微缺陷的消除…………………………………………………………………一【9)MO—CVD法汽相生长Gal—xAlxAs的初步结果……………………………………一(15)关于P型硅中注入(PF
Work Report Period (Page) Compatible Device Technology and Optimal ICs .................................................................... (1) Elimination of Whirlpool Microdefects ............ ........................................................ [9] Preliminary results of vapor phase growth of MO-CVD Gal-xAlxAs ................................. ...... One (15) About P-type silicon in the injection (PF