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Monte-Carlo计算机模拟程序,SIBL,用来描述离子束增强沉积(IBED)制备氧化硅薄膜的生长过程,提供薄膜组分的深度分布及界面混合等有关信息.它是TRIMSP的发展,并利用了ZBL(Ziegler,Biersack,Littmark)最新的二体势和电子阻止本领.模拟计算中,用一个间断交替的薄膜生长过程(先沉积一层硅原子,然后注入一定量的氮离子)来代替实验上一个沉积原子和离子轰击同时进行的连续过程,且在注入一定量的离子后,对每层原子的组份,密度进行修正,使模拟达到动态化.计算结果表明,薄膜组份比随离子原子到达比的变化关系以及组份的深度分布和实验符合很好.
Monte-Carlo computer simulation program, SIBL, is used to describe the growth process of silicon oxide films prepared by ion beam enhanced deposition (IBED), to provide information on the depth distribution of thin film components and interfacial mixing, etc. It is a development of TRIMSP and utilizes ZBL (Ziegler, Biersack, Littmark) The latest body building and electronic blocking capabilities in simulation calculations, with a discontinuous alternating thin film growth process (first deposited a layer of silicon atoms and then injected a certain amount of nitrogen ions) instead of experimentally A continuous process of depositional atom and ion bombardment is carried out at the same time, and after a certain amount of ions are implanted, the composition and density of each atom are modified to make the simulation reach the dynamic state. The calculation results show that the ratio of the film composition to the atomic number The relationship between the arrival ratio and the depth distribution of the components is in good agreement with the experiment.