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采用ＧＳＭＢＥ工艺生长的单晶ＳｉＧｅ ＨＢＴ 结构材料，经Ｘ射线双晶衍射，透射电镜和扩展电阻深度分布测量说明：该材料晶体完整性好，无应力弛豫，界面平整陡峭．发射区Ｎ 型掺杂浓度２×１０１９～１×１０２０ｃｍ － ３，厚度１００～２００ｎｍ ；基区ＳｉＧｅ合金Ｇｅ 组分０．０５～０．２０，Ｐ型掺杂浓度５×１０１８ｃｍ － ３，厚度４０～１００ｎｍ ；集电极浓度～１×１０１６ｃｍ － ３．达到了生长ＳｉＧｅ ＨＢＴ 材料的条件．
The single crystal SiGe HBT material grown by GSMBE process has been characterized by X-ray double crystal diffraction, transmission electron microscopy and extended resistance depth distribution. The results show that the material has good crystal integrity, no stress relaxation and a steep interface. The emitter region has an n-type dopant concentration of 2 × 10 19 -1 × 10 20 cm -3 and a thickness of 100-200 nm; a base SiGe alloy has a Ge component of 0.05-0.20; a p-type dopant concentration of 5 × 10 18 cm -3; a thickness of 40 ~ 100nm; collector concentration ~ 1 × 1016cm - 3. The conditions for growth of SiGe HBT material have been achieved.