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采用射频（RF）磁控溅射的方法，成功地在（100）单晶硅片上沉积制备出了高品质的c-BN薄膜，并通过对基片的高能离子束的预处理，有效地改善了c－BN薄膜中因内应力导致的差的附着性能．进一步研究了衬底负偏压、温度与薄膜质量的关系，讨论了薄膜中内应力的状态．在此基础上，深入开展了硬质合金上沉积c-BN薄膜的工作，为c-BN薄膜的实际应用奠定了基础．
A high quality c-BN thin film was successfully deposited on (100) monocrystalline silicon wafer by radio frequency (RF) magnetron sputtering. By pretreatment of high energy ion beam on the substrate, Poor adhesion to c-BN film due to internal stress is improved. The relationship between substrate negative bias, temperature and film quality was further studied, and the state of internal stress in the film was discussed. On this basis, the work of depositing c-BN thin film on cemented carbide has been deeply carried out, which lays the foundation for the practical application of c-BN thin film.