一、概述离子注入技术是当代半导体器件的基础工艺。目前生产中用得最多的离子注入机的能量大都在200keV左右。对某些高水平的鬼子器件而言,这种中等能量的离子注入深度达不到工艺要求,一般都需要在注入后进行长时间的热处理,通过热扩散运动使注入的杂质达到工艺要求的深度。但是随着对半导体器件性能要求的提高和图形线宽的减小,这种注入加退火的工艺缺点日益严重。高能离子注入机由于能量高,对某种器件工艺来讲,单靠注入本身即可使注入离子的深度达到要求。这就可以省去或大大缩短热处理时间,使加工周期缩短,成本降 First, an overview of ion implantation technology is the foundation of contemporary semiconductor devices. At present, the most used ion implanter in the production of energy is about 200keV. For some high-level ghost devices, this medium-energy ion implantation depth does not meet the process requirements, and generally requires a long time after the injection heat treatment, through the thermal diffusion movement of impurities to achieve the required depth of the process . However, with the improvement of the performance requirements of semiconductor devices and the reduction of the line width of the figure, the disadvantages of the implantation and annealing process are becoming increasingly serious. High-energy ion implanters due to high energy, for a device technology is concerned, just by injecting itself can make the depth of ion implantation to meet the requirements. This can save or greatly reduce the heat treatment time, shorten the processing cycle, the cost down