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氨化硅基钒应变层氧化镓膜制备了大量氮化镓纳米线,X射线衍射、扫描电子显微镜和透射电子显微镜观察发现,纳米线具有十分光滑且干净的表面,其直径为20~60nm左右,长度达到十几微米。高分辨透射电子显微镜和选区电子衍射分析结果表明,制备的氮化稼纳米线为六方纤锌矿结构。光致发光谱显示制备的氮化稼纳米线有良好的发光特性。另外,简单讨论了氮化稼纳米线的生长机制。
Amorphous silicon nitride vanadium strained layer of gallium oxide film prepared a large number of gallium nitride nanowires, X-ray diffraction, scanning electron microscopy and transmission electron microscopy showed that the nanowire has a very smooth and clean surface, a diameter of about 20 ~ 60nm , The length of more than ten microns. High-resolution transmission electron microscopy and selected area electron diffraction analysis results show that the prepared nanowires nitride hexagonal wurtzite structure. Photoluminescence spectra showed that the prepared nanowires had good luminescence properties. In addition, a brief discussion of the growth mechanism of nanowires nitride.