硅单晶中的杂质氧对硅器件质量影响很大。它产生热施主,使材料电阻率发生变化;在晶体生长时氧还会引起空位团、氧——深能级杂质复合物;在器件制备过程中还会产生新的结构缺陷。这样就使MOS及LSI等器件的稳定性和可靠性恶化,成品率下降。为此,就必须尽量降低直拉硅单晶中的氧含量。 Impurity oxygen in silicon single crystal has a great influence on the quality of silicon devices. It generates thermal donor, the material resistivity changes; oxygen in the crystal growth will cause vacancies, oxygen - deep level impurity complexes; in the device manufacturing process will produce new structural defects. This makes MOS and LSI devices such as the stability and reliability deterioration, yield decline. To this end, we must try to reduce the Czochralski silicon in the oxygen content.