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利用俄歇电子能谱（ＡＥＳ）、二次离子质谱（ＳＩＭＳ）等表面分析手段，对硅栅ＭＯＳ结构Ｐｏｌｙ－Ｓｉ／ＳｉＯ２界面进行分析，发现该界面不是突变的，存在着成份过渡区．根据多晶硅薄膜的成核理论，确定该过渡区形成的物理起源．利用Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ隧道发射和“幸运电子”模型，定量分析过渡区对氧化层电导和器件热电子注入效应的影响
The analysis of Si-gate MOS structure Poly-Si / SiO2 interface by Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) analysis shows that the interface is not abrupt, and there is a transition region of composition. According to the nucleation theory of polycrystalline silicon thin film, the physical origin of the formation of the transition region is determined. Fowler-Nordheim tunneling and “lucky electron” model were used to quantitatively analyze the influence of the transition region on the oxide conductance and the device’s hot electron injection