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本文討論了利用二极管由正向至反向恢复的阶跃特性所构成的多种新穎毫微秒脉冲电路;指出了阶跃恢复二极管在高重复頻率毫微秒脉冲电路中应用的多种可能性;并根据电荷存儲概念对各电路的物理机构提出了定性描述。 本文所研究的电路分成三类:将高重复頻率正弦波变換成毫微秒脉冲的形成电路;将响应慢的脉冲变換成响应快的脉冲的整形电路;与晶体管配合的毫微秒脉冲发生器电路。 通过这些电路的討論,提出阶跃恢复二极管在脉冲电路中应用的重要性及潛在能力。在以后的論文中将探討其它新型电路,并对某些电路作較詳尽的分析,提供实际应用举例。
This article discusses a variety of novel nanosecond pulse circuits that make use of the step characteristics of diodes from forward to reverse recovery and points out the many possibilities that step recovery diodes are used in high repetition rate nanosecond pulse circuits According to the concept of charge storage, a qualitative description of the physical mechanism of each circuit is proposed. The circuits studied in this paper are divided into three categories: forming circuits that convert high repetition frequency sine waves into nanosecond pulses; shaping circuits that convert slower responding pulses into faster responding pulses; and nanosecond pulses associated with transistors Generator circuit. Through the discussion of these circuits, the importance and potential of the application of the step recovery diode in the pulse circuit are proposed. In the future papers will explore other new circuits, and some of the circuits for more detailed analysis, to provide practical examples.