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超高真空条件下,采用电子束蒸发工艺在Si(111)衬底上交替蒸镀200A的Co和Si薄膜形成多层膜结构,在恒温炉中作稳态热退火,然后用XRD、RBS及AES等技术作分析,研究了Co-Si多层膜固相反应的相序,用四探针测量了反应生成的钴硅化物的电阻率。结果表明,随着退火温度的升高,淀积在Si(111)上的Co膜逐步转化为Co_2Si、CoSi和CoSi_2,最后完全转化为CoSi_2。在比单层膜低得多的温度下退火获得了电阻率较低、表面形态良好、晶粒很大的CoSi_2薄膜材料。
Under ultra-high vacuum conditions, 200A Co and Si films were alternately deposited on the Si (111) substrate by electron beam evaporation to form a multi-layer film structure, which was then subjected to steady-state thermal annealing in a constant temperature furnace. AES and other techniques for the analysis of the phase sequence of Co-Si multilayer solid-phase reaction, with four probes measured by the reaction of cobalt silicide resistivity. The results show that the Co film deposited on Si (111) is gradually transformed into Co_2Si, CoSi and CoSi_2 with the increase of annealing temperature and finally transformed into CoSi_2. Annealing at a much lower temperature than monolayers resulted in CoSi 2 thin films with low resistivity, good surface morphology and large grains.