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采用双曲正切函数的经验描述方法和器件物理分析方法 ,建立了适用于亚微米、深亚微米的 L DD MOSFET输出 I- V特性解析模型 ,模型中重点考虑了衬底电流的作用 .模拟结果与实验有很好的一致性 .该解析模型计算简便 ,对小尺寸器件中的热载流子效应等能够提供较清晰的理论描述 ,因此适用于器件的优化设计及可靠性分析
Based on the experiential description of hyperbolic tangent function and the physical analysis of the device, an analytical model of I-V characteristic of L DD MOSFET for submicron and deep submicron is established, and the effect of substrate current is considered in the model. And has good agreement with the experiment.The analytical model is simple to calculate and can provide a clear theoretical description of hot carrier effects in small size devices and is therefore suitable for device optimization design and reliability analysis