本文介绍了用深能级瞬态谱(DLTS)法测量GaAs MESFET的深能级杂质和缺陷。在有源层中一般没有测到深能级杂质和缺陷,但在有源层与缓冲层界面附近测到了多个空穴陷阱和电子陷阱。其中空穴陷阱的能级有0.41eV、0.53eV、0.68eV、0.91eV;电子陷阱的能级有0.30eV、0.44eV、0.84eV。并对部分陷阱的性质作了初步的讨论。 This article describes the deep level impurity and defect measurement of GaAs MESFETs using the DLTS method. Deep-level impurities and defects are generally not detected in the active layer, but multiple hole traps and electron traps are detected near the interface between the active layer and the buffer layer. The energy levels of hole traps are 0.41eV, 0.53eV, 0.68eV and 0.91eV, and the energy levels of electron traps are 0.30eV, 0.44eV and 0.84eV. And the nature of some traps made a preliminary discussion.