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在半导体器件工艺中,多数情况是在硅衬底中掺 p 型或者 n 型杂质形成 pn 结。而最基本的 pn 结形成方法,一般采用杂质的热扩散法。通常,这种扩散工艺是由预沉积和再扩散两步工序组成的。首先是预沉积工序,它是在硅表面形成浅的高浓度杂质扩散区,其次是再扩散工序,它是使结更深地向硅衬底内推进,控制表面杂质浓度。认为控制了这个杂质浓度和结深就确定了半导体器件的性能,这种说法也并不过分。而且还可以说,预沉积将大大影响扩散的好坏。因此,本文简要说明一下关于预沉积中 p 型杂质(硼)扩散源的情况。同时,介绍一下最近 Owens-Illinois 公司研究的新的硼扩散源“Boro+~(TM)”(以下省略 TM)的优点。
In semiconductor device processes, pn junctions are often formed by implanting p-type or n-type impurities in a silicon substrate. The most basic pn junction formation method, the general use of impurities in the thermal diffusion method. In general, this diffusion process consists of a two-step pre-deposition and re-diffusion process. The first is the pre-deposition process, which forms a shallow, high-concentration impurity diffusion region on the silicon surface, followed by a re-diffusion process that causes the junction to push deeper into the silicon substrate to control the surface impurity concentration. That the control of the impurity concentration and junction depth to determine the performance of semiconductor devices, this argument is not excessive. But also can be said that pre-deposition will greatly affect the proliferation of good or bad. Therefore, this article briefly describes the case of a p-type impurity (boron) diffusion source in pre-deposition. In the meantime, the advantages of the new boron diffusion source “Boro + ™” (hereinafter abbreviated as TM) recently researched by Owens-Illinois Company are introduced.