论文部分内容阅读
基区表面电特性对双极器件影响很大,本文建立了集成双极npn晶体管基区表面电势的二维模型。文中还通过对采用SiO_2膜和Si_3N_4-SiO_2双层膜一次钝化的电容(MOS和MNOS)和栅控npn晶体管的表面电特性的研究,发现SiO_2-Si_3N_4一次钝化膜能有效地减小基区表面电势。
The electrical properties of the base region have a great influence on the bipolar devices. In this paper, a two-dimensional model of integrated bipolar npn transistor base region surface potential is established. Through the study on the surface electrical properties of the passivated capacitors (MOS and MNOS) and the gate-controlled npn transistors using SiO_2 and Si_3N_4-SiO_2 double passivation films, it is found that SiO_2-Si_3N_4 passivation film can effectively reduce the base Area surface potential.