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氧化物薄膜近几年来受到了人们普遍的重视。MgO、SiO_2和ZrO_2等材料不仅可以用作各种电子器件中的绝缘层,还起到了隔离层的作用,可有效地阻止多层膜之间因互扩散造成的界面反应。迄今为止,实验已经证实许多材料都可作为很好的隔离层或多层膜中的绝缘层,包括 SrTIO_3、Y-ZrO_2、PrBa_2Cu_3O_7、Y_2O_3、CeO_2和MgO等。这些材料在不同的器件制备中具有不同的作用,可供选择。MgO是一种离子性很强的氧化物材料。属NaCl结构,溶点高达2800℃,介电常数为10,自由能最低的低指数解理面为{100}面,晶格常数
Oxide films have gained widespread attention in recent years. Materials such as MgO, SiO 2 and ZrO 2 not only can be used as insulation layer in various electronic devices, but also can act as isolation layer, which can effectively prevent interfacial reaction caused by interdiffusion among multilayer films. So far, experiments have proved that many materials can be used as a good insulating layer or multilayer insulating layer, including SrTIO_3, Y-ZrO_2, PrBa_2Cu_3O_7, Y_2O_3, CeO_2 and MgO and so on. These materials have different effects in the preparation of different devices to choose from. MgO is a very ionic oxide material. Is a NaCl structure with a melting point as high as 2800 ° C., a dielectric constant of 10, a low index cleavage plane with the lowest free energy of {100} plane, a lattice constant