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本文介绍用“渡越时间”法测量辉光放电硅烷生长的本征非晶硅材料的电子迁移率。讨论了电场强度和注入光强度对瞬态光电流的影响。由于制备条件的不同,a-Si:H材料中电子迁移率在0.3～1.2cm~2/V.s之间。由于非晶硅材料中局域态对电子的陷阱作用,电子陷阱的释放弛豫时间均大于1μs。
This article describes the measurement of the electron mobility of intrinsic amorphous silicon materials grown by glow discharge silane using the “transit time” method. The effects of electric field intensity and injected light intensity on transient photocurrent are discussed. Due to the different preparation conditions, the electron mobility of the a-Si: H material is between 0.3 and 1.2 cm 2 / V.s. Due to the trapped state of electrons in the amorphous silicon material, the release time of the electron trap is more than 1μs.