据《信学技报》(日)2009年109(210)期报道,日本电气通信大学采用串联负荷型GaN HEMT开发了微波多蒂尔功率放大器。1.9 GHz的放大器与原来的推挽式放大器相比,在输出功率24 dBm时,功率附加效率由15%提高到了31%;推 According to “Letters Science and Technology” (Japan) 2009 109 (210) period report, Nippon Electric and Communication University using series load GaN HEMT developed microwave Doerei power amplifier. 1.9 GHz Amplifier Compared to the original push-pull amplifier, the power added efficiency increased from 15% to 31% at output power of 24 dBm;